Shot-Noise-Induced Failure in Nanoscale Flip-Flops Part II: Failure Rates in 10-nm Ultimate CMOS

IEEE Transactions on Electron Devices(2012)

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摘要
In part I of this paper, a robust numerical framework based on Markov queueing theory and nonequilibrium Green's functions was presented to model the fluctuations in a CMOS flip-flop, which could potentially give rise to logic upsets. In part II, this framework is used to investigate quantitatively the failure in time for end-of-roadmap CMOS devices at the LG= 10 nm length scale as a function of v...
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关键词
Noise,Threshold voltage,Transistors,CMOS integrated circuits,Capacitors,Nanoscale devices,Reliability
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