Dimensionality Dependence of TFET Performance Down to 0.1 V Supply Voltage

With the recent emergence of 1-D and 2-D semiconductors, this brief assesses the performance of tunnel FETs (TFETs) made in semiconductors of different dimensionalities. The major difference among them arises from the density-of-states associated with the momentum in the direction perpendicular to the tunneling path. By applying an analytic model with an exponential barrier, continuous Ids-Vgs and...