Epitaxially Defined FinFET: Variability Resistant and High-Performance Technology

Shashank Gupta,Aneesh Nainani,Sushant Mittal,Klaus Schuegraf,Udayan Ganguly,Saurabh Lodha,Mathew Abraham

IEEE Transactions on Electron Devices（2014）

引用 13|浏览8

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摘要

FinFET technology is prone to suffer from line edge roughness (LER)-based VT variation with scaling. It also lacks a simple implementation of multiple VT technology needed for power management. To address these challenges, in this paper we present an epitaxially defined FinFET (EDFinFET) as an alternate to FinFET architecture for nodes 15 nm and beyond. We show by statistical simulations that EDFi...

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关键词

FinFETs,Logic gates,Epitaxial growth,Immune system,Semiconductor process modeling,Resource description framework,Doping

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