Monolithic Integration of an Active InSb-Based Mid-Infrared Photopixel With a GaAs MESFET

Chengzhi Xie,Vincenzo Pusino,Ata Khalid,Matthew J Steer,Marc Sorel,I G Thayne,D R S Cumming

IEEE Transactions on Electron Devices（2015）

引用 18|浏览7

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摘要

Medium wavelength infrared (MWIR) detectors are of increasing importance in defense, security, commercial, and environmental applications. Enhanced integration will lead to greater resolution and lower cost focal plane arrays (FPAs). We present the monolithic fabrication of an active photopixel made in InSb on a GaAs substrate that is suitable for large-scale integration into an FPA. Pixel address...

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关键词

MESFETs,Gallium arsenide,Resistance,Ohmic contacts,Monolithic integrated circuits,Photodetectors

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