Characterization Of Silicon Ribbon By The Sem Methods

Investigation of silicon layers grown on carbon foil was carried out using the Electron Backscatter Diffraction (EBSD) and Electron Beam Induced Current (EBIC) methods. The EBSD investigations showed that the surface of silicon ribbon is close to (110) and that most of grain boundaries (GBs) are twin boundaries with the misorientation angle of 60 degrees between the neighbouring grains. The diffusion length in Si ribbon studied was obtained to exceed 35 mu m. The EBIC measurements showed that the recombination contrast of dislocations and twin GBs at room temperature is practically absent and only random GBs produced a noticeable contrast. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim