Characterization of CdMnTe crystal grown with vertical Bridgman method under Te-rich conditions: Characterization of CdMnTe crystal grown with vertical Bridgman method under Te-rich conditions

In this study, the Indium (In) doped Cd1-xMnxTe (x(Mn)= 0.1, CdMnTe) crystals with excess Te in the amount of 0 and 1.2 at% were grown by the Bridgman method. The segregation coefficient of In dopants distributions in the CdMnTe crystals with and without excess Te were determined to be 0.08 and 0.11, respectively. The IR transmission microscopy shown that the size of Te inclusions in CdMnTe crystal with excess Te increased to 5-13 mu m with the concentrations of (2-3) x 10(5) cm(-3). The PL spectra indicated the formation of Te antisite donor and the compensation of Cd vacancies by Te antisites. The Current-Voltage measurements were performed and the resistivity of the CdMnTe crystal with excess Te was in the range of 10(8)-10(9) Omega.cm, increased by one order as compared to the crystal without excess Te. Under the radiation of 59.5 keV Am-241, The CdMnTe planar detectors fabricated from the crystal with excess Te revealed the energy resolution of 8.4%, however, no energy response is resolved in the CdMnTe detectors without excess Te. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim