Synchrotron Radiation X-Ray Topography And X-Ray Diffraction Of Homoepitaxial Gan Grown On Ammonothermal Gan

Sakari Sintonen,Muhammad Ali,Sami Suihkonen,Pasi Kostamo,Olli Svensk,Markku Sopanen,Harri Lipsanen, Carsten Paulmann, Turkka O. Tuomi, Marcin Zajac

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7（2012）

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摘要

In this study, homoepitaxial GaN grown on ammonothermal GaN substrates is non-destructively investigated by synchrotron radiation X-ray topography (SR-XRT) and X-ray diffraction (XRD). The homoepitaxial GaN layer was found to be of excellent crystal quality with individual dislocations clearly visible in the SR-XRT images. SR-XRT images and XRD rocking curves suggest the dislocations are mainly of mixed type. To the best of our knowledge the measured dislocation density is the lowest reported in a homoepitaxial GaN film. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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X-ray topography,GaN,X-ray diffraction,dislocations

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