Molybdenum Atomic Layer Deposition Using MoF 6 and Si 2 H 6 as the Reactants

Mo ALD has been demonstrated by fluorosilane elimination chemistry using MoF6 and Si2H6 as the reactants. The nucleation and growth characteristics of Mo ALD were investigated using a variety of in situ and ex situ techniques in both high vacuum and viscous flow reactors. Quartz crystal microbalance (QCM) and X-ray reflectivity (X.12.12) investigations showed that Mo ALD has significant growth rate of 500-600 ng/cm(2) per cycle or 6-7 angstrom per cycle for temperatures between 90 and 150 degrees C. The large growth rates could result from extra Mo deposition by MoF6 Mo 3F(2) that may be facilitated by the very exothermic reaction of MoF6 with silicon-containing surface species. The QCM studies revealed that the Mo ALD surface chemistry is self-limiting. The QCM and Auger electron spectroscopy (AES) studies indicated that Mo ALD nucleates very rapidly on Al2O3 ALD surfaces and reaches the linear growth regime after only 4-5 ALD cycles. Oscillatory behavior for the total mass gain and individual mass gains was observed versus ALD cycle number during the nucleation region. The AES studies revealed that Mo films grown in a high vacuum reactor do not contain silicon impurities. In contrast to the AES results, Rutherford backscattering spectroscopy (RBS) analysis showed that Mo ALD films grown in a viscous flow reactor contain similar to 16 at % Si impurities. X-ray photoelectron spectroscopy (RBS) analysis confirmed the presence of silicon and showed that varying temperature, precursor dose and purge parameters did not lower the Si impurities significantly. Glancing incidence X-ray diffraction (GIXRD) studies indicated that Mo ALD films were nanocrystalline. The Si impurities may exist at grain boundaries or amorphous Mo silicides as a result of Si2H6 decomposition during the highly exothermic fluorosilane elimination reaction. Fourier transform infrared (FTIR) analysis revealed that MoFx surface species are reduced to metallic Mo during the Si2H6 exposure. Because of its rapid nucleation rate, Mo ALD films could serve as ultrathin continuous conducting films or as adhesion layers for other metal ALD systems on oxide surfaces.