Characterization Of Gaas Self-Aligned Refractory-Gate Metal-Semiconductor Field-Effect Transistor (Mesfet) Integrated-Circuits

J H Magerlein,D J Webb,A Callegari,Jens Feder, T Fryxell, H C Guthrie,Peter D Hoh, J W Mitchell,Andrew T S Pomerene, S Scontras, G D Spiers, J Greiner

JOURNAL OF APPLIED PHYSICS（1987）

引用 23|浏览7

暂无评分

关键词

threshold voltage,ohmic contact,contact resistance,arsenic,schottky diode,digital logic,field effect transistor,integrated circuit,schottky barrier,standard deviation

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要