Xenon Doping Of Glow Discharge Polymer By Ion Implantation

We demonstrate controlled doping of a glow discharge polymer by implantation with 500 keV Xe ions at room temperature. The Xe retention exhibits a threshold behavior, with a threshold dose of similar to 2 x 10(14) cm(-2). Doping is accompanied by irradiation-induced changes in the polymer composition, including gradual H loss and a more complex non-monotonic behavior of the O concentration. The matrix composition saturates at C0.77H0.22O0.01 for Xe doses above similar to 5 x 10(14) cm(-2) and up to the maximum dose studied (5 x 10(15) cm(-2)). The retention mechanism is attributed to the modification of the polymer from a chain-like to clustered ring structure. The dopant profile and the elemental composition of the implanted polymer exhibit good stability upon thermal annealing up to 305 degrees C. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4707949]