Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

Journal of Alloys and Compounds, pp. 17-23, 2013.

Cited by: 7|Bibtex|Views0|DOI:https://doi.org/10.1016/j.jallcom.2013.04.020
Other Links: academic.microsoft.com|www.sciencedirect.com

Abstract:

•We examined the effects of O2 annealing on electrical properties of AlGaN/GaN heterostructures.•O2 annealing suppresses tunneling leakage current due to surface states or dislocations.•O2 annealing depletes the two-dimensional electron gas and decreases threshold voltage.•O2 annealing increases the resistance of GaN buffer by annihilatin...More

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