Nonvolatile unipolar resistive switching behavior of amorphous BiFeO 3 films

Journal of Alloys and Compounds(2015)

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摘要
•Amorphous BiFeO3 (ABFO) films was grown by magnetron sputtering at RT.•Nonvolatile unipolar resistive switching behavior in an Au/ABFO/ITO device.•High resistance ratio of over 102 and excellent retention performance.•The resistive switching was attributed to the migration of oxygen vacancies.
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关键词
Amorphous BiFeO3,Thin films,Resistive switching,Oxygen vacancies
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