High performance trench MOS barrier Schottky diode with high-k gate oxide

Zhai Dongyuan,Zhu Jun,Zhao Yi,Cai Yinfei,Shi Yi,Zheng Youliao

CHINESE PHYSICS B（2015）

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摘要

A novel trench MOS barrier Schottky diode (TMBS) device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.

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关键词

trench MOS barrier Schottky diode,high-k gate oxide,leakage current

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