Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor DevicesMarkxinwei wang[0]omair i saadat[0]bin xixiabing lou[0]r j molnar[0]tomas palacios[0]roy g gordon[0]Applied Physics Letters, 2012.Cited by: 11|Bibtex|Views2Other Links: academic.microsoft.comKeywords: atomic layer depositionwide band gap semiconductorspassivationelectrical conductivityCode: Data: Full Text (Upload PDF)PPT (Upload PPT)SimilarReferenceCitedUpload PPTYour rating :0 TagsCommentsSubmit
