Enhanced Low Field Magnetoresistance In Germanium And Silicon-Diode Combined Device At Room Temperature

We report on a large (similar to 200%), room-temperature, small field (20mT) magnetoresistance effect in germanium and silicon-diode combined device. This enhanced magnetoresistance is attributed to geometry of germanium and nonlinear electro-transport characteristic of silicon-diode. A two-dimensional finite element model is built to simulate the experimental results. Our work may pave a way to develop low field magnetoresistance devices from germanium and silicon. (C) 2014 AIP Publishing LLC.