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Interfacial Transport Homogenization For Nanowire Ensemble Photodiodes By Using A Tunneling Insertion

APPLIED PHYSICS LETTERS(2013)

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摘要
Interfacial transport inhomogeneity critically degrades the performance of nanowire ensemble photodiodes. In this work, an ultrathin Al2O3 insertion is introduced to improve the photoresponse including stable response, a high on/off ratio, and a quick response ascent/descent. Homogeneous tunneling across the insertion dominantly controls the transport fluctuation originated from the inconsistent interfacial states of individual nanowires. The present work demonstrates a progressive practical application of nanowire ensemble devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795317]
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关键词
nanowire ensemble photodiodes,interfacial transport homogenization
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