Interfacial Transport Homogenization For Nanowire Ensemble Photodiodes By Using A Tunneling Insertion
APPLIED PHYSICS LETTERS(2013)
摘要
Interfacial transport inhomogeneity critically degrades the performance of nanowire ensemble photodiodes. In this work, an ultrathin Al2O3 insertion is introduced to improve the photoresponse including stable response, a high on/off ratio, and a quick response ascent/descent. Homogeneous tunneling across the insertion dominantly controls the transport fluctuation originated from the inconsistent interfacial states of individual nanowires. The present work demonstrates a progressive practical application of nanowire ensemble devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795317]
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关键词
nanowire ensemble photodiodes,interfacial transport homogenization
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