Enhanced Memory Effect Via Quantum Confinement In 16nm Inn Nanoparticles Embedded In Zno Charge Trapping Layer
APPLIED PHYSICS LETTERS(2014)
摘要
In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al2O3 layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-V-gate measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4V, the memory shows a noticeable threshold voltage (V-iota) shift of 2V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10 V, a memory window of 5V is achieved and the V-iota shift direction indicates that electrons tunnel from channel to charge storage layer. (C) 2014 AIP Publishing LLC.
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