Bulk Silicon As Photonic Dynamic Infrared Scene Projector

APPLIED PHYSICS LETTERS(2013)

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摘要
A Si-based fast (frame rate >1 kHz), large-scale (scene area 100 cm(2)), broadband (3-12 mu m), dynamic contactless infrared (IR) scene projector is demonstrated. An IR movie appears on a scene because of the conversion of a visible scenario projected at a scene kept at elevated temperature. Light down conversion comes as a result of free carrier generation in a bulk Si scene followed by modulation of its thermal emission output in the spectral band of free carrier absorption. The experimental setup, an IR movie, figures of merit, and the process's advantages in comparison to other projector technologies are discussed. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4800936]
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bulk silicon
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