Electrical Stability Of Inkjet-Patterned Organic Complementary Inverters Measured In Ambient Conditions

Complementary organic inverters were fabricated by inkjet patterning of both the metal contacts and the semiconductors. Bottom-gate, bottom-contact organic thin-film transistors with Ta2O5-polymer bilayer dielectrics, inkjet-printed silver electrodes, and inkjet-printed organic semiconductors exhibit hole and electron mobilities as high as similar to 10(-2) cm(2)/V s. Complementary inverters based on these transistors operate in ambient and exhibit a gain of -4.4 with supply voltage V-DD=+20 V and -3 dB cutoff at 100 kHz with a load of 0.02 pF. The electrical stability of the inverters was evaluated for analog and digital operation, and a noise margin >= 1.1 V at V-DD=+15 V was measured with bias-stress effects included.