Setback Modulation Doping Of Hgte-Cdte Multiple Quantum-Wells

C A Hoffman,J R Meyer,F J Bartoli,Y Lansari, J W Cook,J F Schetzina

APPLIED PHYSICS LETTERS（1992）

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摘要

Photoassisted molecular beam epitaxy has been used to achieve the first setback modulation doping of HgTe-CdTe heterostructures. A 43 angstrom setback is found to yield a factor-of-2 increase of the mobility over any measured previously for intentionally doped samples, and an 81 angstrom setback leads to further enhancement of the mobility.

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关键词

quantum hall effect,energy gap,quantum well,superlattices,hall effect,molecular beam epitaxy,electron density,cadmium telluride

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