Infrared Reflectivity Spectra Of Gas-Source Molecular Beam Epitaxy Grown Dilute Innxas1-X/Inp (001)

Vibrational spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001) alloys are obtained using a Fourier-transform infrared (IR) spectroscopy. A triply degenerate N-As local vibrational mode of T-d-symmetry is observed near 438 cm(-1) corresponding to the In-N bond energy. The analysis of composition dependent infrared reflectivity spectra in InNAs has predicted a two-phonon-mode behavior. In In(Ga)-rich GaInNAs alloys the observed splitting of the NAs local mode into a doublet for the N-As-Ga-1(In-1)In-3(Ga-3) pair-defect of C-3v-symmetry is consistent with our simulated results based on a sophisticated Green's function theory. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790605]