Largely Defocused Probe Scanning Transmission Electron Microscopy for Imaging Local Modulation of Strain Field in a Hetero Interface

We present an innovative method for characterizing the strain field in three dimensions in a hetero interface. Largely defocused probe scanning transmission electron microscopy (LDP-STEM) was employed for imaging the inhomogeneous strain field in a germanium (Ge) layer deposited on a silicon (Si) substrate. In the LDP-STEM image, Ge-atomic columns that are relaxed or strained to the Si substrate in the Si/Ge hetero interface were observed to be distinguishable, allowing for the qualitative characterization of the coherency of the crystal growth. Our results revealed that the strain field is locally modulated along the in-plane direction in the Si/Ge hetero interface.