Oxygen Vacancies-Induced Metal-Insulator Transition In La2/3sr1/3vo3 Thin Films: Role Of The Oxygen Substrate-To-Film Transfer

Electrical transport properties of La2/3Sr1/3VO3 (LSVO) thin films grown on LaAlO3 (LAO) and SrTiO3 (STO) substrates have been investigated. It is found that the LSVO/LAO show metalinsulator transition when decreasing the temperature, while the LSVO/STO exhibit metallic behavior. The difference in transport properties of LSVO thin films has been discussed based on the variation of oxygen content and can be attributed to different oxygen substrate-to-film transfer. These results highlight the crucial role of oxygen stoichiometry in determining the physical properties of LSVO and the importance of oxygen-substrate contribution in LSVO thin films. (c) 2014 AIP Publishing LLC.