Method For Determining The Radiative Efficiency Of Gainn Quantum Wells Based On The Width Of Efficiency-Versus-Carrier-Concentration Curve

We report a method to determine the radiative efficiency (RE) of a semiconductor by using room-temperature excitation-dependent photoluminescence measurements. Using the ABC model for describing the recombination of carriers, we show that the theoretical width of the RE-versus-carrier-concentration (n) curve is related to the peak RE. Since the normalized external quantum efficiency, EQE(normalized), is proportional to the RE, and the square root of the light-output power, root LOP, is proportional to n, the experimentally determined width of the EQE(normalized)-versus-n curve can be used to determine the RE. We demonstrate a peak RE of 91% for a Ga0.85In0.15N quantum well. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770317]