Silicon Field Emission Arrays Coated with CoSi 2 Layer Grown by Reactive Chemical Vapor Deposition

We prepared Si emitters coated with an MOCVD CoSi 2 layer to improve the emission properties. The CoSi 2 layer was grown in situ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt at 650 °C. The CoSi 2 layer was conformally coated on the Si emitter tips and had a twinned structure at the epitaxial CoSi 2 /Si interface. The CoSi 2 -coated Si emitters showed an enhanced emission due to the increase of the number of emitting site from Fowler-Nordheim plot. The fluctuation of emission current was reduced by CoSi2 coating. But the long-term stability was not much improved.