Optimisation Issues Of Algaas/Gaas Qw-Sch Lasers Intended For 808 Nm Range

To meet the requirements for the narrow emission line of the laser diode pumping systems exactly at 808 nm wavelength, an optimisation of the laser (AlGa)As heterostructure because of the composition and thickness of the constituent layers is necessary. In the paper the design principles, the characteristics of the manufactured laser diodes based on this design and intrinsic limitations of the possibility of 'tuning' the lasers to desired wavelength in the MOVPE growth process are presented.