Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH3 flow rate for the growth of SiNx capping layerWon Jun Choi,H T Yi,Deok Ha Woo,Seok Lee,Sun Ho Kim,Sang Sam Choimag（2000）引用 23|浏览7暂无评分关键词quantum well,flow rateAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
