Hot-probe method for evaluation of majority charged carriers concentration in semiconductor thin films

Physical properties of thin films significantly differ from those of bulk materials. Also, these properties are influenced from the technological parameters of the films deposition technique. Therefore, characterization methods for evaluation of thin film properties become of high importance. A novel approach to the well-known "Hot-Probe" method is proposed and applied in our work. The conventional Hot Probe characterization method enables only the definition of a semiconductor type, P or N, by identifying the majority of the charged carriers. According to the new Hot Probe technique, one can measure and calculate the impurities concentration and charged carriers dynamic parameters. Feasibility proof of the upgraded Hot Probe method was done in Si and Ge bulk, and in thin film semiconductor samples of In2O3 and VO2.