Characteristics of a ceramic-substrate x-ray diode and its application to computed tomography

X-ray photon counting was performed using a silicon X-ray diode (Si-XD) at a tube current of 2.0 mA and tube voltages ranging from 50 to 70 kV. The Si-XD is a high-sensitivity Si photodiode selected for detecting X-ray photons, and Xray photons are directly detected using the Si-XD without a scintillator. Photocurrent from the diode is amplified using charge-sensitive and shaping amplifiers. To investigate the X-ray-electric conversion, we performed the event-pulse-height (EPH) analysis using a multichannel analyzer. Photon-counting computed tomography (PC-CT) is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by the linear scan. The exposure time for obtaining a tomogram was 10 min at a scan step of 0.5 mm and a rotation step of 1.0. In PC-CT at a tube voltage of 70 kV, the image contrast of iodine media fell with increasing lower-level voltage of the event pulse using a comparator.