Lateral Extension of Dislocations in NMOS IC

MRS proceedings/Materials Research Society symposia proceedings（1986）

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摘要

Dislocations extending through channel regions of NMOSFETs with submicron gate lengths have been observed. Additionally, arrays of dislocations in the field regions of IC’s have also been observed and found to be generating from the corners of the first n+ region during subsequent high temperature process.

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