Shape-Dependent Dose Margin Correction Using Model-Based Mask Data Preparation

Dose Margin has always been known to be a critical factor in mask making. This paper describes why the issue is far more critical than ever before with the 20-nm logic node and beyond using ArF Immersion lithography. Model-Based Mask Data Preparation (MB-MDP) had been presented [references] to show shot count improvements for these complex masks. This paper describes that MB-MDP also improves the dose margin. The improvement predicted with theoretical simulation with D2S is confirmed by the results of real mask written by JBX-3200MV (JEOL) by HOYA.