2 GHz Meißner VCO in Si Bipolar Technology

A completely integrated 2 0Hz Meisner VCO in silicon bipolar for wireless communications is presented. The chip is implemented in a 25GHz fT, 0.8?m, 3-layer-interconnect silicon bipolar production technology B6HF. The Meisner type oscillator circuit uses on-chip multiple coupled inductors and achieves a phase noise of -102dBc/Hz at an offset of l00kHz. The VCO is designed for 3V to 5V battery operation and delivers ?8.7 dBm of output power. The VCO meets the specifications for DECT cordless telephone sets.