Highly Reliable 637-639 Nm Red High-Power Lds For Displays

HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VIII(2010)

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摘要
Higher power laser diodes (LDs) with a wavelength of 637-639nm are strongly demanded as a light source of display applications because luminosity factor of laser light is relatively high. In order to realize reliable high power operation, we have optimized LD structure, focusing on improvement of power saturation and sudden degradation. As a result, 40 mu m-wide broad-area (BA) LDs with window-mirror structure have been designed. We fabricated two kinds of single emitter LDs of 1.0mm cavity and 1.5mm cavity. The single LD is installed in conventional phi 5.6 mm TO-CAN package. The 1.0mm LD showed very high wall plug efficiency (WPE) of 33% at 25 degrees C (23% at 45 degrees C) in the power range of around 300mW (30 lm). High output power of 600mW (60 lm) is realized by the 1.5mm LD. Both LDs have operated for over 1,000 hours without any degradation. Estimated mean time to failure (MTTF) is 10,000 hours. In addition, we fabricated an array LD consisting of 20 emitters (BA-LD structure), which shows reliable CW operation of 8W (at junction temperature of 50 degrees C) for 10,000 hours.
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关键词
laser display, laser diode, semiconductor laser, red laser, AlGaInP, window-mirror
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