More Than Moore: Iii-V Devices And Si Cmos Get It Together
2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)(2013)
摘要
We summarize results on the successful integration of III-V electronic devices with Si CMOS on a common silicon substrate using a fabrication process similar to SiGe BiCMOS. The heterogeneous integration of III-V devices with Si CMOS enables a new class of high performance, 'digitally assisted', mixed signal and RF ICs.
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关键词
silicon,cmos integrated circuits
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