A 0.13 Mu M Bicmos Technology Featuring A 200/280 Ghz (F(T)/F(Max)) Sige Hbt

Bradley A Orner,Q Z Liu, Bethann Rainey,Astrid R Stricker,P Geiss,Philip D Gray,Michael J Zierak,Mirta B Gordon, D Anthony Collins,V Ramachandran, W Andrew Hodge,Christa R Willets,Alvin J Joseph,John Dunn,J S Rieh,S J Jeng,E Eld,G Freeman,David C Ahlgren

BCTM PROCEEDINGS（2003）

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摘要

We present for the first time a very high performance SiGeHBT with f(T) = 200 GHz and f(max) = 280 GHz that has been successfully integrated with IBM's standard 0.13 mum foundry-compatible CMOS node into our next generation BiCMOS 8HP technology.

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