A Fully Modular 1-Mu-M Cmos Technology Incorporating Eeprom, Eprom And Interpoly Capacitors

ESSDERC 90(1990)

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摘要
This paper will describe a modular technology which uses a novel integration scheme to include double poly EEPROM, single poly EPROM and an interpoly capacitor. The single poly EPROM [1] has been adopted to simplify the integration issues; the three modules (EEPROM, EPROM and A/D) can be combined in any combination without affecting their electrical performance.
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关键词
oxidation,cmos technology,etching,capacitors,logic gates,programming,eprom,transistors,nonvolatile memory,low voltage
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