A 0.37-0.43 Thz Wideband Quadrupler With 160 Mu W Peak Output Power In 45 Nm Cmos

2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS)(2013)

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摘要
This paper presents a wideband 45 nm CMOS SOI quadrupler at 370 to > 430 GHz. The balanced multiplier results in a very low third harmonic component, and uses reflectors at the output port to reflect the fundamental and the second harmonic frequency into the quadrupler for improved efficiency. The measured output power is > 100 W at 370-430 GHz with a peak value of 150-160 W at 390-415 GHz and a conversion loss of 19-20 dB. To the author's knowledge, this is the first demonstration of a wideband CMOS quadrupler at THz frequencies.
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关键词
CMOS, frequency multiplier, mm-wave, quadrupler, THz sources
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