Accurate Modeling And Characterization Of Mobility In Tensile And Compressive Stress For State-Of-The-Art Manufacturing Nmosfets

J S Wang,William P N Chen, C H Shih,Chiuwang Lien,Pin Su,Yeuanming Sheu, Donald Y S Chao,K Goto

2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS（2007）

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摘要

A novel mobility model and its characterization technique were presented for manufacturing strained-Si NMOSFETs. The mobility terms in Matthiessen's form can be precisely decoupled to investigate Coulomb scattering effect for different stress conditions. Stress devices suffered serious Coulomb scattering at high vertical field, however, tensile stress NMOSFET exhibits better mobility enhancement than compressive counterpart due to less Coulomb scattering.

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关键词

tensile stress,parasitic capacitance,tensile testing,compressive stress,silicon,degradation,stress analysis,si,mobility model,carrier mobility,scattering

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