A 90 To 170v Scalable P-Ldmos With Accompanied High Voltage Pjfet

John Ellis-Monaghan,Yun Shi,Santosh Sharma,Natalie Feilchenfeld, Ted Letavic, Rick Phelps, Crystal Hedges, Don Cook,Jim Dunn

2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)（2012）

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摘要

A novel JFET redesign of a laterally scaled P-LDMOS device is presented. The P-LDMOS device has excellent Rsp as it is scaled from 90V to 170V operation. This P-LDMOS design is modified to produce a 100V PJFET with good turn-off characteristics and a relatively low Vpinch of 3-7V.

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关键词

Power MOSFET,LDMOS,RESURF,PJFET,PLDMOS

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