AlGaInN laser diode technology for free-space telecom applications

S P Najda,P Perlin,T Suski,L Marona,M Bockowski,M Leszczynski,P Wisniewski,R Czernecki,R Kucharski,Grzegorz Targowski,S Watson, A E Kelly,Mark A Watson, P Blanchard,H G White

Proceedings of SPIE（2015）

引用 3|浏览65

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摘要

The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., similar to 380nm, to the visible similar to 530nm, by tuning the indium content of the laser GaInN quantum well. We consider the suitability of AlGaInN laser diode technology for free space laser communication, both airborne links and underwater telecom applications, mainly for defence and oil & gas industries.

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关键词

GaN laser,GaN array,free-space communication

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