Structure and method for making heterojunction bipolar transistor having self-aligned silicon-germanium raised extrinsic baseKevin K Chan,Marwan H Khater,K T Schonenberg, Panda Siddharthamag(2005)引用 23|浏览5暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要