Optoelectronic Properties Of The Metal-Dielectric Complex Thin Films For Applying High Sensitivity Ir Image Sensors

High sensitivity IR image sensors require materials characteristics with temperature coefficient of resistance (TCR) and IR range absorption. In this study, the metal-dielectric thermo sensitive films (MDTF) based on (SiO2)(x)-(Ti)(y) composition were deposited on substrates of germanium and glass by thermal evaporator. The SiO2 : Ti mixture was made from the ratio of 9 : 1, 8 : 2, 7 : 3, 6 : 4, respectively. (SiO2)(x)-(Ti)(y) mixture powder was loaded on tungsten boat in evaporator and was 15.5 cm from the substrate. Resistance of (SiO2)(x)-(Ti)(y) in the range of 273 similar to 333 K were measured as a function of temperature. Temperature coefficient of resistance (TCR) was calculated by the resistance variation. Under the various mixture ratios condition, it is possible to obtain SiO2-Ti layers with resistance from units kilo-ohm to hundreds kilo-ohm. Finally, our results showed that Temperature coefficient of resistance (TCR) of these films varies from -1.4 to -2.6 % K-1.