Characterization of hydrogenated amorphous silicon thin-film solar cell defects using optical beam induced current imaging and focused ion beam cross-sectioning technique

L. Meng,Steven E. Steen, C. K. Koo,Charanjit S. Bhatia,A.G. Street, Pratik P. Joshi,Young-Hee Kim, Jacob C. H. Phang

photovoltaic specialists conference(2011)

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摘要
Defects in hydrogenated amorphous silicon (a-Si:H) thin-film solar cells were localized by optical beam induced current (OBIC) imaging and then characterized using focused ion beam (FIB) cross-sectioning technique. It was found that nano-voids in the active silicon layer and transparent conductive oxide underneath the back electrode were the main causes of OBIC signal reduction.
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关键词
transparent conductive oxide,crystal defects,thin film solar cell,cross section,ion beam,silicon,edge detection,imaging,focused ion beam
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