U-shape phenomenon in the efficiency-versus-current curves in AlGaN-based deep-ultraviolet light-emitting diodes

conference on lasers and electro optics(2015)

引用 0|浏览13
暂无评分
摘要
The efficiency of an AlGaN deep-ultraviolet light-emitting diode with peak emission wavelength of 285nm is investigated as a function of current over a wide range of temperatures (110K to 300K). We find that the efficiency-versus-current curve exhibits unique and distinct features over the entire temperature range including three points of inflection, a u-shape phenomenon which the efficiency increases again after the minimum, and higher low-temperature efficiency than room-temperature efficiency at high-current density regime.
更多
查看译文
关键词
wide band gap semiconductors,light emitting diodes,ionization
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要