Poly-Si TFTs Fabricated on Flexible Substrates by Using Sputter Deposited a-Si Films

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on flexible substrates are investigated. The a-Si precursor films were deposited by using a rf-magnetron sputtering system with argon-helium mixture gas to minimize the argon incorporation into the Si film. The a-Si films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of 63.6 cm(2)/V(.)s, on/off ratio of 10(5), and threshold voltage of -1.5 V.