Full-Band Monte Carlo Simulation Of High-Energy Transport And Impact Ionization Of Electrons And Holes In Ge, Si, And Gaas
SISPAD '96 - 1996 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES（1996）
关键词
silicon,monte carlo simulation,valence band,spin orbit interaction,monte carlo methods,germanium,gallium arsenide,impact ionization
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