Breakdown in ALD-processed oxide based thin film structures

We report on the continuous increase of the breakdown electric field, also known as disruptive strength, of an ultra thin layer based on Al 2 O 3 prepared by atomic layer deposition (ALD) by reducing its thickness from 90 nm down to 3 nm. By calculating the disruptive strength for lower thicknesses, we demonstrate that our observations are in agreement with recent reports. Additionally, the disruptive strength increases to lower thicknesses as the pinhole density rises. The pinholes, referred to as morphological defects, are detected by Cu electroplating and result in a lower permittivity of the dielectric. As a conclusion, the dielectric breakdown is predominantly attributed to intrinsic, meaning stoichiometric defects. Thus, morphological defects, consisting of pinholes generated by agglomerative growth of the dielectric, surprisingly do not have a negative influence on the dielectric breakdown of ALD-processed ultra thin dielectric layers.