Halogen Free Dry Etching Of Ingan/Algan Optoelectronic Device Structures

2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS)（2005）

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摘要

We have developed a halogen free inductively coupled plasma fast dry etch for InGaN/AlGaN based LED and laser structures. The absence of any toxic source gases make the process much simpler to implement.

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关键词

inductive coupled plasma,semiconductor lasers,wide band gap semiconductors,light emitting diodes

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