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GaN-Based Heterostructures Grown on ZnO Substrates: from Polarity Control to the Fabrication of Blue LEDs

Asia Communications and Photonics Conference 2014(2014)

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摘要
A substrate leading to growth process simplicity and original properties such as polarity design could be attractive for nitride based optoelectronics. The potential of ZnO substrates, including GaN polarity control and LED fabrication, is presented.
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关键词
electroluminescence,molecular beam epitaxial growth,GaN polarity control,nitride based optoelectronics,blue LEDs,ZnO substrates,GaN-based heterostructures,ZnO,(GaIn)N-GaN
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