Continuous Wave Ingaasp/Inp Fabry-Perot Lasers On Silicon

T. Dupont,L. Grenouillet,P. Philippe, M. Perrin,P. Gilet,B. Ben Bakir,J. M. Fedeli, P. Grosse,L. Di Cioccio,A. Chelnokov,F. Lelarge, F. Pommereau,G. H. Duan, J. L. Gentner

2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)（2008）

引用 3|浏览32

暂无评分

摘要

We present 1.55 mu m InGaAsP/InP Fabry-Perot lasers on silicon realized by a die-to-wafer CMOS compatible SiO2/SiO2 bonding process. The devices run under continuous wave operation at room temperature with a maximal output power of 4mW and a threshold current of 108mA at 15 degrees C.

查看译文

关键词

Semiconductor lasers,heterogeneous integration,silicon photonics

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要